Fine-Controlled Surface Modification Techniques in III-V Compound Semiconductor Materials(Atomic Layer Epitaxy).

Chemical Beam Epitaxy of Iii-v Semiconductor Heterostructures

Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high s...

III−V Compound Semiconductor Nanopillars Monolithically Integrated to Silicon Photonics

We propose a platform based on III−V compound semiconductor nanopillars monolithically integrated with silicon photonics. Nanopillars were grown in a process free of metal catalysts onto silicon at low temperature, and a bottom-up process was applied to define the photonic integrated circuit. Stimulated and spontaneous emissions from the nanopillars are direct coupled to silicon waveguides.

Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane semiconductor lasers

A nonselective wet thermal oxidation technique for AlGaAs-containing heterostructures has been shown to enable the fabrication of a variety of novel high-efficiency, high-power GaAs-based in-plane laser devices. Applied in conjunction with a deep anisotropic dry etch, nonselective oxidation yields a simple, self-aligned high-index-contrast (HIC) ridge waveguide (RWG) structure. The native oxide...

Towards controlled Doping in III-V Semiconductor Nanowires

Nanowires are quasi-one-dimensional single crystals with lateral dimensions that can be scaled-down to only a few nanometers. They can simultaneously act as active components and interconnects and therefore fulfill the two basic functions of any active device. However, controlled doping of III-V nanowires is challenging due to strong Fermi-level pinning as well as the kinetic and thermodynamic ...